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Contents:
  1. Semiconductor nanomembranes: a platform for new properties via strain engineering
  2. Bibliographic Information
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  4. Product | Nanoscaled Semiconductor-on-insulator Structures and Devices

Semiconductor nanomembranes: a platform for new properties via strain engineering

Antonova, J. Stano, O. Naumova, V. Skuratov, V. Evtukh, A. Kizjak, V. Litovchenko, C. Claeys, E. Naumova, A.

Frantzusov, I. V Antonova, V.


  • Nanoscaled Semiconductor-on-Insulator Structures and Devices!
  • Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices | Book;
  • Universal Algebras.
  • Table of contents.

Houk, A. Nazarov, V. Turchanikov, V. Lysenko, S.

Bibliographic Information

Adriaensen, D. Rudenko, V. Kilchytska, D. Lukyanchikova, N. Garbar, A. Smolanka, E. Simoen, C. Hall, O. Buiu, I. Mitrovic, H. El Mubarek, P. Ashburn, M. Bain et al. Bain, S. Stefanos, P. Baine, S. Loh, M. Jin, J. Montgomery et al.


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  2. Nanoscaled Semiconductor-on-Insulator Structures and Devices | S. Hall | Springer.
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  5. Discover the benefits of publishing your research with Semiconductor Science and Technology and submit your article today. Diffuse reflectance and absorption spectroscopies revealed that the optical band-gap energies of the synthesized nanowires separated in the form of bundles are 1.

    This was done on the basis of density functional theory with the generalized gradient approximation, and also with an improved version of the exchange potential suggested recently by Tran and Blaha. The main characteristic is the significant improvement of the band gap value. In this work we present a simple route to grow metallic, semiconducting or semi-metallic nanowires by chemical vapor deposition. Metallic indium In , semiconducting indium antimonide InSb and semi-metallic antimony Sb nanowires were successfully synthesized by controlling temperature and hence Sb vapor pressure in the higher eutectic region of the InSb phase diagram.

    However, the higher growth temperature resulted in Sb re-evaporating from the growing nanowire crystal, leading to growth of In nanowires. A higher hole mobility compared to electron mobility and the presence of surface states is the most likely cause of the hole-dominated conductivity in the Sb nanowires. The nanowires grew onto the surface of the nanorods exhibiting multiple bends along them. The luminescence of the samples recorded three bands centered at about 2. In this study, novel independent double-gate IDG junction-less J-less polycrystalline silicon poly-Si nano-strip transistors have been fabricated and investigated.

    Inversion-mode IM IDG poly-Si nano-strip transistors with the undoped channel have also been fabricated for comparison. The experimental data show the superior on-state current of J-less transistors over that of IM transistors mainly due to the reduction of the channel resistance R ch. However, the drain-induced barrier lowering of the J-less transistors is larger than that of IM transistors but the double-gate DG configuration can mitigate this problem to some extent.

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    Besides, the subthreshold swing and its fluctuation of the J-less transistors are worse than those of IM transistors under the single-gate operation. Fortunately, this issue can be significantly improved by the aid of DG configuration according to our experimental results. Through a comparison with transparent polymer composite films, we investigate the thermal property of transparent silver nanowire AgNW films that may be employed for heat sink in transparent electronic devices.

    It is observed that the thermal emissivity of the AgNW films is decreased as the sheet resistance is reduced. However, we have found that the AgNW film shows the most excellent heat dissipation property Single crystalline Zn 3 P 2 nanowires were synthesized on Si substrates via vapour phase deposition catalysed by In—Au seeds.

    Single nanowire devices were fabricated and the metal—Zn 3 P 2 nanowire contacts were studied using a model based on two Schottky barriers as a function of temperature. The obtained values showed no significant dependence on the temperature, indicating that the defects at the nanowire's surfaces did not affect the device characteristics. We found evidence of an acceptor level at 49 meV, also indicating that the dominant transport mechanism is the thermal activation of carriers as is found in the bulk Zn 3 P 2.

    It seems that the p-type behaviour is independent of the dimensionality of the Zn 3 P 2 samples and primarily associated with the phosphorous interstitial atoms. In this paper, the characteristics of tunneling leakage current for the dual-material gate junctionless nanowire transistor DMG-JNT are investigated by three-dimensional numerical simulations and compared with conventional junctionless nanowire transistor JNT.

    The suppression of the tunneling leakage current on the JNT by introducing an energy band step with the DMG structure is verified and presented for the first time. ZnO nanorods were grown on a silver-coated textile fabric substrate by using the hydrothermal route. Scanning electron microscopy and x-ray diffraction techniques were used for the structural study.


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    The current density—voltage J—V and capacitance—voltage C — V measurements were used to estimate the electrical parameters. This study describes the possible fabrication of electronic and optoelectronic devices on textile fabric substrate with an acceptable performance. The hybridization of the plasmon oscillations with the optical phonon waves in cylindrical polar semiconductor nano-wires is investigated. A simple model based on the hydrodynamic theory in conjunction with the Poisson's equation is proposed.

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    An explicit form of the dispersion relation for hybridized surface plasmon-optical phonon modes of the system is derived. The Sb concentration variation was related to the optical properties as determined by photoluminescence PL.

    Electronic Devices Lecture-7: Energy-band Structure of Insulator, Semiconductor and Metal

    A clear trend relating the maximum Sb concentration with the insert length was observed: the longer the insert, the higher the Sb concentration. In addition, there are graded Sb concentration gradients both along and across the GaAsSb inserts. Weak type II transitions within the inserts due to the graded Sb concentration were observed as well. Using an existing empirical model, the Sb concentrations were additionally determined from the ground state PL energies type I transition.

    Fabrication, current—voltage characterization and analytical modeling of an AlInP-passivated GaAs nanowire NW ensemble device are presented. During fabrication, sonication was used as a novel and crucial step to ensure effective contacting of the NWs. Current—voltage characteristics of the passivated NW devices were fitted using an analytical surface depletion and transport model which improves upon established models by implementing a non-uniform density of GaAs surface states and including a NW diameter distribution.

    Product | Nanoscaled Semiconductor-on-insulator Structures and Devices

    Scanning electron microscopy, capacitance—voltage characterization and secondary ion mass spectrometry were used to fix key parameters in the model. Moreover, the thickest NWs in the ensemble were found to dictate the device characteristics, which is a behavior that should be common to all ensemble NW devices with a distribution in radius. The fabrication and passivation methods can be easily implemented into future optoelectronic applications. Transmission electron microscopy TEM results are used to illustrate each case.